2SK3443 2002-02-06 1 toshiba field effect transistor silicon n channel mos type ( -mos v ) 2SK3443 switching regulator, dc-dc converter and motor drive applications low drain-source on resistance: r ds (on) = 50 m ? (typ.) high forward transfer admittance: y fs = 9 s (typ.) low leakage current: i dss = 1 00 a (v ds = 1 50 v) enhancement-mode: v th = 3.0 to 5.0 v (v ds = 1 0 v, i d = 1 ma) maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v dss 150 v drain-gate voltage (r gs 20 k ) v dgr 150 v gate-source voltage v gss 30 v dc (note 1) i d 30 drain current pulse (note 1) i dp 120 a drain power dissipation (tc 25c) p d 125 w single pulse avalanche energy (note 2) e as 468 mj avalanche current i ar 30 a repetitive avalanche energy (note 3) e ar 12.5 mj channel temperature t ch 150 c storage temperature range t stg 55 to 150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 1.00 c/w note 1: please use devices on condition that the channel temperature is below 150c. note 2 v dd 50 v, t ch 25c (initial), l 773 h, r g 25 , i ar 30 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita sc-97 toshiba 2-9f1b weight: 0.74 g (typ.) circuit configuration notice: please use the s 1 pin for gate input signal return. make sure that the main current flows into s2 pin. 1 2 3 4
2SK3443 2002-02-06 2 electrical characteristics (note 4) (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 25 v, v ds 0 v 10 a drain cut-off current i dss v ds 150 v, v gs 0 v 100 a drain-source breakdown voltage v ( br ) dss i d 10 ma, v gs 0 v 150 v gate threshold voltage v th v ds 10 v, i d 1 ma 3.0 5.0 v drain-source on resistance r ds ( on ) v gs 10 v, i d 15 a 50 55 m forward transfer admittance y fs v ds 10 v, i d 15 a 4.5 9 s input capacitance c iss 2030 reverse transfer capacitance c rss 340 output capacitance c oss v ds 10 v, v gs 0 v, f 1 mhz 1200 pf rise time t r 20 turn-on time t on 40 fall time t f 10 switching time turn-off time t off 40 ns total gate charge (gate-source plus gate-drain) q g 45 gate-source charge q gs 21 gate-drain (?miller?) charge q gd v dd 120 v, v gs 10 v, i d 30 a 24 nc note 4: please connect the s1 pin and s2 pin, and then ground the connected pin. (however, while switching times are measured, please don?t connect and ground it.) source-drain diode ratings and characteristics (note 5) (ta 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1, note 5) i dr 1 30 a pulse drain reverse current (note 1, note 5) i drp 1 120 a continuous drain reverse current (note 1, note 5) i dr 2 1 a pulse drain reverse current (note 1, note 5) i drp 2 4 a forward voltage (diode) v ds2f i dr1 30 a, v gs 0 v 1.5 v reverse recovery time t rr 250 ns reverse recovery charge q rr i dr 30 a, v gs 0 v, di dr /dt 100 a/ s 1.75 c note 5: drain, flowing current value between the s1 pin, open the s2 pin unless otherwise specified, please connect the s1 and s2 pins, and then ground the connected pin. marking duty
1%, t w 10 s 0 v 10 v v gs1 r l 5.0 v dd 75 v i d 15 a v out g s 1 d 4.7 s 2 lot number month (starting from alphabet a) year (last number of the christian era) type k3443
2SK3443 2002-02-06 3 0.001 0.01 0.1 1 10 100 1000 common source tc 25c pulse test 3 5 30 50 300 500 1 15 v gs 10 v forward transfer admittance y fs (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) y fs ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) (m ) 50 40 30 20 10 0 0 1 2 3 4 5 v gs 7 v 7.5 common source tc 25c pulse test 8 8.5 9 9.5 10 15 100 80 60 40 20 0 0 4 8 12 16 20 v gs 7 v common source tc 25c pulse test 8 9 10 11 12 15 4 0 1 2 3 5 7.5 15 048 16 12 20 common source tc 25c pulse test i d 30 a 100 0.1 1 10 0.1 1 10 100 100 25 tc 55c common source v ds 10 v pulse test 0 4 8 16 12 20 tc 55c common source v ds 10 v pulse test 100 25 0 10 20 30 40 50
2SK3443 2002-02-06 4 10 1 0 0.2 0.4 1.2 2.0 100 1.6 1000 common source tc 25c pulse test 0.6 0.8 1.0 1.4 1.8 v gs 0 v 3 v 5 v 10 v drain power dissipation p d (w) gate threshold voltage v th (v) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 0 80 40 0 40 80 120 160 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 i d 30 a i d 7.5 a i d 15 a common source v gs 10 v pulse test 40 80 10 0 40 80 120 200 120 160 160 200 0 80 40 0 40 80 120 160 1 2 3 4 5 6 common source v ds 10 v i d 1 ma pulse test 40 80 0 0 20 40 60 100 120 160 80 200 v dd 120 v 60 v 30 v v gs v ds common source i d 30 a tc 25c pulse test 0 4 8 12 16 20 50 300 1000 5000 10 0.1 1 3 30 100 1000 100 30 500 3000 10000 10 300 30000 c iss c oss c rss common source v gs 0 v f 1 mhz tc 25c
2SK3443 2002-02-06 5 safe operating area drain current i d (a) channel temperature (initial) tch (c) e as ? t ch avalanche energy e as (mj) r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g 25 v dd 50 v, l 773 h v dd b vdss b vdss 2 i l 2 1 as drain-source voltage v ds (v) dc operation tc 25c v dss max 0.1 1 3 10 30 100 300 0.3 1 3 10 30 100 300 * single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. 100 s * 1 ms * i d max (pulsed) * 1 0.1 0.00001 0.0001 10 0.001 0.01 0.1 1 10 single pulse 0.2 0.1 0.05 0.02 0.01 t p dm t duty t/t r th (ch-c) 1.0c/w duty 0.5 0.01 0 25 100 200 300 500 400 50 75 100 125 150
2SK3443 2002-02-06 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a safety restrictions on product use
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